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Re: gEDA-user: LED in reverse
On Nov 20, 2006, at 8:38 AM, Karel Kulhavy wrote:
On Sun, Nov 19, 2006 at 09:20:53PM +0100, wk0 wrote:
Some time ago i read the warning for RF transistors that reverse
biasing into
breakdown of the E-B junction may significantly increase noise
figure.
Does it increase the noise figure permanently or only temporarily?
Permanently.
What if I have a circuit with 2N3904 transistors with 5V break down
and it has
12V power supply and on turn-on, a little current at 12V goes
through the
junction the wrong way? Do I have to design my circuits to prevent
that?
I wouldn't worry about it with a 2N3904. The RF transistors that have
this problem have relatively thin, lightly doped base regions making
them much more susceptible to damage. Indeed, from a noise figure
point of view the 2N3904 is *intentionally* damaged in manufacturing
by gold doping to improve saturated switching performance.
John Doty Noqsi Aerospace, Ltd.
jpd@xxxxxxxxx
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