Re: gEDA-user: SPICE/gEDA updated. . . . .

[sdb@cloud9.net (Stuart Brorson)]

[ . . . . . . .   Snip!!! . . . . . ]
> > Yeah, thanks.  Now some questions:
> > 
> > 1.  Will the parameters of the calculations apply to *all* MOSFETs?
> > Or to just those whose model-name is "nmos"?    The point here is that
> > I need to know what attribute to key off of -- the (DEVICE or REFDES)
> > or the MODEL-NAME.
> 
> The parameters can be expected to vary based on the device.  For example,
> some MOS processes offer options like a low threshold voltage device or a
> thicker oxide device to support a higher voltage I/O.  The design rules
> would be different for these devices.

So that means that each device of a particular geometry must have an
individual MODEL-NAME & incorporation of technology file information
would key off of the MODEL-NAME.

> > 2.  Are the formulas used the same for  all MOSFETs?  Or does they vary
> > from model to model?  (Note that I don't mean the coefficients, but
> > rather the actual form of the formulae.)
> > 
[. . . . . . . . .]
> 
> I _think_ the formulas should be constant for different processes but with
> different parameters.  However, I can't claim to have enough experience in
> delving into that level of detail on the cad system for enough different
> processes to be sure.

Do you have any friends who are device physicists who could answer
this question?  I can ask around, but it may take a while . . . .

Stuart